IRF7828PBF Datasheet, PDF (2/6 Pages) International Rectifier – HEXFET® Power MOSFET for DC-DC Converters

IRF7828PbF
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
BV_DSS
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
C^Cuu^rr^rr^eeⁿn^t t*
R_DS(on)
V_GS(th)
I
DSS
Min Typ
30 –
– 9.5
1.0 –
––
––
Max Units
–
V
12.5 mΩ
–
V
1.0
150 µA
Gate-Source Leakage
I_GSS
Current
Total Gate Chg Cont FET
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
Q_G
Q_G
Q_GS1
Post-Vth
Gate-Source Charge
Q_GS2
Gate to Drain Charge
Q_GD
Switch Chg(Q_gs2 + Q_gd)
Q_sw
Output Charge
Q_oss
Gate Resistance
R_G
Turn-on Delay Time
t_{d (on)}
Rise Time
t_r
Turn-off Delay Time
t_{d (off)}
Fall Time
t_f
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance C_rss
– – ±100 nA
– 9.2 14
– 7.3 –
– 2.5 –
– 0.8 – nC
– 2.9 –
– 3.7 –
– 6.1 –
– 2.3 –
Ω
– 6.3 –
– 2.7 – ns
– 9.7 –
– 7.3 –
– 1010 –
– 360 – pF
– 110 –
Conditions
V_GS = 0V, I_D = 250µA
V_GS = 4.5V, I_D = 10A‚
V_DS = V_GS,I_D = 250µA
V = 24V, V = 0
DS
GS
V_DS = 24V, V_GS = 0,
Tj = 125°C
V_GS = ±20V
V_GS=5.0V, I_D=15A, V_DS=16V
V_GS = 5V, V_DS< 100mV
V_DS = 15V, I_D = 10A
V_DS = 10V, V_GS = 0
V_DD = 15V, I_D = 10A
V_GS = 4.5V
Clamped Inductive Load
V_DS = 15V, V_GS = 0
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Units Conditions
Diode Forward
Voltage*
V_SD
– – 1.0 V
I_S = 10A‚, V_GS = 0V
Reverse Recovery
Charge„
Q_rr
– 13 – nC di/dt ~ 700A/µs
V_DS = 16V, V_GS = 0V, I_S = 15A
Reverse Recovery
Charge (with Parallel
Q_rr(s)
– 13 –
nC
di/dt = 700A/µs
(with 10BQ040)
Schottky)„
V_DS = 16V, V_GS = 0V, I_S = 15A
Notes: _
‚
ƒ
„
…
2
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Q_oss
Typical
values
of
R_DS(on)
measured
at
V
GS
=
4.5V,
Q,
G
Q
SW
and
Q
OSS
measured at V_GS = 5.0V, I_F = 10A.
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