IRF7822PBF Datasheet, PDF (4/6 Pages) International Rectifier – HEXFET® Power MOSFET for DC-DC Converters

IRF7822PbF
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
1.0
VDS = 15V
20µs PULSE WIDTH
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
100
T_J = 150° C
10
1
T_J = 25° C
0.1
0.2
V_GS = 0 V
0.5
0.7
1.0
1.2
V_SD ,Source-to-Drain Voltage (V)
Fig 6. Typical Source-Drain Diode
Forward Voltage
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P _DM
0.1
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t₁
t₂
Notes:
1. Duty factor D =
t₁/ t ₂
2. Peak T _J = P _DM x Z _thJA
+T_A
0.0001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
10
100
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
www.irf.com