IRF7822PBF Datasheet, PDF (2/6 Pages) International Rectifier – HEXFET® Power MOSFET for DC-DC Converters

IRF7822PbF
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
BV_DSS
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
C^Cuu^rr^rr^eeⁿn^t t*
R_DS(on)
V_GS(th)
I
DSS
Min Typ
30 –
5.0
1.0
Max Units
–
V
6.5 mΩ
V
30
150 µA
Gate-Source Leakage
I_GSS
Current
Total Gate Chg Cont FET
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
Q_G
Q_G
Q_GS1
Post-Vth
Gate-Source Charge
Q_GS2
Gate to Drain Charge
Q_GD
Switch Chg(Q_gs2 + Q_gd)
Q_sw
Output Charge
Q_oss
Gate Resistance
R_G
Turn-on Delay Time
t_{d (on)}
Rise Time
t_r
Turn-off Delay Time
t_{d (off)}
Fall Time
t_f
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance C_rss
±100 nA
44 60
38
13
3.0
nC
9.0
12
27
1.5
Ω
15
5.5
ns
22
12
– 5500 –
– 1000 – pF
– 300 –
Conditions
V_GS = 0V, I_D = 250µA
V_GS = 4.5V, I_D = 15A‚
V_DS = V_GS,I_D = 250µA
V = 24V, V = 0
DS
GS
V_DS = 24V, V_GS = 0,
Tj = 100°C
V_GS = ±12V
V_GS=5.0V, I_D=15A, V_DS=16V
V_GS = 5.0V, V_DS< 100mV
V_DS = 16V, I_D = 15A
V_DS = 16V, V_GS = 0
V_DD = 16V, I_D = 15A
V_GS = 5.0V
Clamped Inductive Load
V_DS = 16V, V_GS = 0
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Units Conditions
Diode Forward
V_SD
Voltage*
1.0 V
I_S = 15A‚, V_GS = 0V
Reverse Recovery
Q_rr
Charge„
120
nC di/dt ~ 700A/µs
V_DS = 16V, V_GS = 0V, I_S = 15A
Reverse Recovery
Q_rr(s)
Charge (with Parallel
108
nC di/dt = 700A/µs
(with 10BQ040)
Schottky)„
V_DS = 16V, V_GS = 0V, I_S = 15A
Notes: _
‚
ƒ
„
…
2
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Q_oss
Typical
values
of
R_DS(on)
measured
at
V
GS
=
4.5V,
Q,
G
Q
SW
and
Q
OSS
measured at V_GS = 5.0V, I_F = 15A.
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