IRF7822PBF Datasheet, PDF (1/6 Pages) International Rectifier – HEXFET® Power MOSFET for DC-DC Converters

PD - 95024
IRF7822PbF
HEXFET^® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Lead-Free
S
1
S
2
A
8
D
7
D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
SO-8
S
3
G
4
6
D
5
D
Top View
DEVICE CHARACTERISTICS…
The IRF7822 has been optimized for all parameters that
are critical in synchronous buck converters including
R_DS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7822 offers particulary low R_DS(on) and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
R_DS(on)
Q_G
Q_sw
Q_oss
IRF7822
5.0mΩ
44nC
12nC
27nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V_GS ≥ 4.5V)
Pulsed Drain Current
T = 25°C
A
T_A = 70°C
Power Dissipation
T_A = 25°C
T_A = 70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
www.irf.com
Symbol
V_DS
V_GS
I
D
I_DM
P_D
T_J, T_STG
I
S
I_SM
R_θJA
R_θJL
IRF7822
30
±12
18
13
150
3.1
3.0
–55 to 150
3.8
150
Max.
40
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
1
9/30/04