IRF7799L2TR Datasheet, PDF (4/11 Pages) International Rectifier – DirectFET

Power MOSFET

IRF7799L2TR/TR1PbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
10
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
5.0V
1
5.0V
0.1
0.1
≤60µs PULSE WIDTTHj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000
VDS = 50V
≤60µs PULSE WIDTH
100 _{TJ = 175°C}
TJ = 25°C
TJ = -40°C
10
1
0.1
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
1
≤60µs PULSE WIDTTHj = 175°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
3.0
ID = 21A
2.5 ^{VGS = 10V}
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 7. Normalized On-Resistance vs. Temperature
14.0
ID= 21A
12.0
VDS= 200V
10.0
VDS= 125V
VDS= 50V
8.0
6.0
4.0
2.0
0.0
0
20 40 60 80 100 120 140 160
QG, Total Gate Charge (nC)
Fig 9. Typical Total Gate Charge vs
Gate-to-Source Voltage
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