IRF7799L2TR Datasheet, PDF (1/11 Pages) International Rectifier – DirectFET

Power MOSFET

l RoHS Compliant, Halogen Free 
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
l Industrial Qualified
PD - 96266
IRF7799L2TRPbF
IRF7799L2TR1PbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
250V min ± 30V max
Q_{g tot}
Q_gd
110nC 39nC
R_DS(on)
32mΩ@ 10V
V_gs(th)
4.0V
S
S
D
G
S
S
S
S
S
D
S
Applicable DirectFET Outline and Substrate Outline 
SB
SC
M2
M4
L8
DirectFET™ ISOMETRIC
L4
L6
L8
Description
The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to
achieve the lowest on-state resistance in a package that has a footprint smaller than a D²PAK and only 0.7 mm profile. The DirectFET package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7799L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system
reliability improvements, and makes this device ideal for high performance power converters.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_A = 25°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
e Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Package Limited)
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
200
60
180
ID = 21A
55
160
50
140
120
45
Max.
250
±30
35
25
6.6
375
140
325
21
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
TJ = 25°C
Units
V
A
mJ
A
100
40
80
TJ = 125°C
60
40
20
4
TJ = 25°C
8
12
16
20
Notes:
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
35
30
25
0
20
40
60
80
100
ID, Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 1.42mH, R_G = 25Ω, I_AS = 21A.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
1
08/31/09