|
IRF7799L2TR Datasheet, PDF (2/11 Pages) International Rectifier – DirectFETPower MOSFET | |||
|
◁ |
IRF7799L2TR/TR1PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)/âTJ
IDSS
Drain-to-Source Breakdown Voltage
250
Breakdown Voltage Temp. Coefficient âââ
Static Drain-to-Source On-Resistance âââ
Gate Threshold Voltage
3.0
Gate Threshold Voltage Coefficient
âââ
Drain-to-Source Leakage Current
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
gfs
Forward Transconductance
54
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Total Gate Charge
âââ
Pre-Vth Gate-to-Source Charge
âââ
Post-Vth Gate-to-Source Charge
âââ
Gate-to-Drain Charge
âââ
Gate Charge Overdrive
âââ
Switch Charge (Qgs2 + Qgd)
âââ
Output Charge
âââ
Gate Resistance
âââ
Turn-On Delay Time
âââ
Rise Time
âââ
Turn-Off Delay Time
âââ
Fall Time
âââ
Input Capacitance
âââ
Output Capacitance
âââ
Reverse Transfer Capacitance
âââ
Output Capacitance
âââ
Output Capacitance
âââ
Diode Characteristics
Parameter
Min.
IS
Continuous Source Current
âââ
(Body Diode)
ISM
Pulsed Source Current
Ãg (Body Diode)
âââ
VSD
Diode Forward Voltage
âââ
trr
Reverse Recovery Time
âââ
Qrr
Reverse Recovery Charge
âââ
Typ.
âââ
0.12
32
4.0
-13
âââ
âââ
âââ
âââ
âââ
110
26
5.7
39
39
45
33
0.73
36.3
33.5
73.9
26.6
6714
606
157
5063
217
Typ.
âââ
âââ
âââ
132
1412
Max. Units
Conditions
âââ V VGS = 0V, ID = 250µA
i âââ V/°C Reference to 25°C, ID = 2mA
38 m⦠VGS = 10V, ID = 21A
5.0
V VDS = VGS, ID = 250µA
âââ mV/°C
20
1
100
-100
âââ
µA
1mA
nA
S
VDS = 250V, VGS = 0V
VDS = 250V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VDS = 50V, ID = 21A
165
âââ
VDS = 125V
âââ nC VGS = 10V
ID = 21A
âââ
See Fig. 9
âââ
âââ nC VDS = 16V, VGS = 0V
âââ
âââ
Ãi â¦
VDD = 125V, VGS = 10V
âââ ns ID = 21A
âââ
RG=6.2â¦
âââ
âââ
VGS = 0V
âââ
VDS = 25V
âââ pF Æ = 1.0MHz
âââ
VGS = 0V, VDS = 1.0V, f=1.0MHz
âââ
VGS = 0V, VDS = 80V, f=1.0MHz
Max. Units
Conditions
MOSFET symbol
35
showing the
A
integral reverse
140
1.3
i p-n junction diode.
V TJ = 25°C, IS = 21A, VGS = 0V
198
2118
i ns TJ = 25°C, IF = 21A, VDD = 50V
nC di/dt = 100A/µs
2
www.irf.com
|
▷ |