IRF7702GPBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET

Power MOSFET Ultra Low On-Resistance 1.8V Rated

IRF7703GPbF
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = -6.0}
16
V _DS= -32V
V _DS= -20V
12
8
4
0
0
30
60
90
120
150
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 150^° C
10
1
T_J = 25^°C
0.1
0.4
V _GS = 0 V
0.6
0.8
1.0
1.2
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µsec
1msec
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
-VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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