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IRF7702GPBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFETPower MOSFET Ultra Low On-Resistance 1.8V Rated
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IRF7703GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
-40 ––– –––
––– 0.030 –––
––– ––– 28
––– ––– 45
-1.0 ––– -3.0
10 ––– –––
––– ––– -15
––– ––– -25
––– ––– -100
––– ––– 100
––– 41 62
––– 16 25
––– 16 24
––– 43 –––
––– 405 –––
––– 155 –––
––– 77 –––
––– 5220 –––
––– 416 –––
––– 337 –––
Units
V
V/°C
mΩ
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -6.0A ‚
VGS = -4.5V, ID = -4.8A ‚
VDS = VGS, ID = -250µA
VDS = -10V, ID = -6.0A
VDS = -32V, VGS = 0V
VDS = -32V, VGS = 0V, TJ = 70°C
VGS = -20V
VGS = 20V
ID = -6.0A
VDS = -20V
VGS = -4.5V
VDD = -20V ‚
ID = -1.0A
RG = 6.0Ω
VGS = -10V
VGS = 0V
VDS = -25V
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– -1.5
showing the
A
integral reverse
G
––– ––– -24
p-n junction diode.
S
––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V ‚
––– 34 51 ns TJ = 25°C, IF = -1.5A
––– 56 84 nC di/dt = -100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ Surface mounted on 1 in square Cu board
2
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