IRF7702GPBF Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET

Power MOSFET Ultra Low On-Resistance 1.8V Rated

IRF7703GPbF
10000
1000
100
10
VGS
TOP
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
1
0.1
-2.7V
0.01
0.001
0.1
20µs PULSE WIDTH
Tj = 25°C
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
10
1
0.1
0.1
-2.7V
20µs PULSE WIDTH
Tj = 150°C
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J= 150° C
10
1
T_J = 25^° C
0.1
0.01
2.0
V _DS= -15V
20µs PULSE WIDTH
2.5 3.0 3.5 4.0 4.5 5.0
-V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = -6.0A}
1.5
1.0
0.5
V_GS= -10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (^° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3