IRF7700 Datasheet, PDF (4/9 Pages) International Rectifier – Power MOSFET(Vdss=-20V)

IRF7700
2000
1600
1200
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
800
400
C_oss
C_rss
0
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
I_D = -4.1A
8
V_DS =-16V
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
4
8
12
16
20
24
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150^° C
1
T_J = 25^° C
0.1
0.0
V_GS = 0 V
0.5
1.0
1.5
2.0
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
10
100us
1ms
1
10ms
T_C = 25 °C
T_J = 150 ° C
Single Pulse
0.1
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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