IRF7700 Datasheet, PDF (1/9 Pages) International Rectifier – Power MOSFET(Vdss=-20V)

l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
V_DSS
-20V
PD - 93894A
IRF7700
HEXFET^® Power MOSFET
R_DS(on) max
0.015@V_GS = -4.5V
0.024@V_GS = -2.5V
I_D
-8.6A
-7.3A
Description
HEXFET^® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package, has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
1
2
3
G
4
1= D
2= S
3= S
4= G
D
8
7
6
S
5
8= D
7= S
6= S
5= D
TSSOP-8
Absolute Maximum Ratings
V_DS
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
±8.6
±6.8
±68
1.5
0.96
0.01
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
83
Units
°C/W
1
6/19/00