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IRF7700 Datasheet, PDF (2/9 Pages) International Rectifier – Power MOSFET(Vdss=-20V)
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IRF7700
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-20 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.011 –––
––– ––– 0.015
––– ––– 0.024
V/°C
Ω
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -8.6A ‚
VGS = -2.5V, ID = -7.3A ‚
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
-0.45 ––– -1.2 V VDS = VGS, ID = -250µA
-20 ––– ––– S VDS = -10V, ID = -8.6A
IDSS
Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -12V
––– ––– 100
VGS = 12V
Qg
Total Gate Charge
––– 59 89
ID = -8.6A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
––– 10 15
––– 19 29
nC VDS = -16V
VGS = -5.0V‚
td(on)
Turn-On Delay Time
––– 19 –––
VDD = -10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 40 ––– ns ID = -1.0A
––– 120 –––
RG = 6.0Ω
––– 130 –––
VGS = -4.5V‚
Ciss
Input Capacitance
––– 4300 –––
VGS = 0V
Coss
Output Capacitance
––– 880 ––– pF VDS = -15V
Crss
Reverse Transfer Capacitance
––– 580 –––
ƒ = TBDkHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
130
180
Max.
-1.5
-68
-1.2
200
270
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.5A, VGS = 0V ‚
TJ = 25°C, IF = -1.5A
di/dt = 100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
ƒ When mounted on 1 inch square copper board, t<10 sec
2
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