IRF7521D1 Datasheet, PDF (4/8 Pages) International Rectifier – FETKY™ MOSFET / Schottky Diode(Vdss=20V, Rds(on)=0.135ohm, Schottky Vf=0.39V)

IRF7521D1
Power Mosfet Characteristics
500
V _GS = 0V,
f = 1MHz
C _iss = C _gs + C _gd , C_ds S H O R TE D
C _rss = C _gd
400
C _oss = C _ds + C _gd
C iss
300
C oss
10
I _D = 1.7A
VDS = 16V
8
6
200
4
C rss
100
2
FOR TEST CIRCUIT
0
A
0
SEE FIGURE 9
A
1
10
100
0
2
4
6
8
10
V _DS , Drain-to-Source Voltage (V)
Q _G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10
T_J = 150°C
1
T_J = 25°C
0.1
0.4
VGS = 0V _A
0.6 0.8 1.0 1.2 1.4 1.6 1.8
V_SD , Source-to-Drain Voltage (V)
10
100µs
1ms
1
10m s
T_A = 25°C
T_J = 150°C
S ing le P u lse
0.1
0.1
1
A
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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