IRF7521D1 Datasheet, PDF (3/8 Pages) International Rectifier – FETKY™ MOSFET / Schottky Diode(Vdss=20V, Rds(on)=0.135ohm, Schottky Vf=0.39V)

2
100
VGS
TOP
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
10
2.0V
BOTTOM 1.5V
Power Mosfet Characteristics
100
VGS
TOP
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
10
2.0V
BOTTOM 1.5V
IRF7521D1
1
0.1
0.01
0.1
1.5V
20µs PULSE W IDTH
T_J = 2 5°C
A
1
10
VD _S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
1.5V
0.1
0.01
0.1
20µs PULSE W IDTH
T_J = 15 0°C
A
1
10
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
10
TJ = 150°C
TJ = 25°C
1
0.1
1.5
V_DS = 10V
20µs PULSE W IDTH
A
2.0
2.5
3.0
3.5
4.0
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0
I_D = 1.7A
1.5
1.0
0.5
0.0
-60
-40 -20 0
V_{G S} = 4.5V
A
20 40 60 80 100 120 140 160
T_J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3