IRF7521D1 Datasheet, PDF (2/8 Pages) International Rectifier – FETKY™ MOSFET / Schottky Diode(Vdss=20V, Rds(on)=0.135ohm, Schottky Vf=0.39V)

IRF7521D1
2
MOSFET Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
R_DS(on)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
20 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.085 0.135 _Ω V_GS = 4.5V, I_D = 1.7A ƒ
––– 0.12 0.20
V_GS = 2.7V, I_D = 0.85A ƒ
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
0.70 ––– –––
2.6 ––– –––
V V_DS = V_GS, I_D = 250µA
S V_DS = 10V, I_D = 0.85A
I_DSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25
µA ^{VDS = 16V, VGS = 0V}
V_DS = 16V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 _nA V_GS = 12V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -12V
Q_g
Total Gate Charge
––– 5.3 8.0
I_D = 1.7A
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
––– 0.84 1.3
––– 2.2 3.3
nC V_DS = 16V
V_GS = 4.5V, See Fig. 6 ƒ
t_d(on)
t_r
t_d(off)
t_f
C_iss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
––– 5.7 –––
V_DD = 10V
––– 24 ––– _ns I_D = 1.7A
––– 15 –––
R_G = 6.0Ω
––– 16 –––
R_D = 5.7Ω, ƒ
––– 260 –––
V_GS = 0V
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
––– 130 ––– pF V_DS = 15V
––– 61 –––
ƒ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current(Body Diode)
ISM
Pulsed Source Current (Body Diode)
V_SD
Body Diode Forward Voltage
t_rr
Reverse Recovery Time (Body Diode)
Q_rr
Reverse RecoveryCharge
Schottky Diode Maximum Ratings
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
39
37
Max.
1.3
14
1.2
59
56
Units
A
V
ns
nC
Conditions
T_J = 25°C, I_S = 1.7A, V_GS = 0V
T_J = 25°C, I_F = 1.7A
di/dt = 100A/µs ƒ
Parameter
Max. Units.
IF(av)
Max. Average Forward Current
1.9 A
1.4
ISM
Max. peak one cycle Non-repetitive
120
Surge current
11 _A
Schottky Diode Electrical Specifications
Conditions
50% Duty Cycle. Rectangular Wave, T_A = 25°C
See Fig.14
T_A = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with V_RRM applied
Parameter
V_FM
Max. Forward voltage drop
IRM
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
Max. Units
0.50
0.62
0.39 ^V
0.57
0.02 _mA
8
92 pF
3600 V/ µs
Conditions
I_F = 1.0A, T_J = 25°C
I_F = 2.0A, T_J = 25°C
I_F = 1.0A, T_J = 125°C
IF = 2.0A, TJ = 125°C .
VR = 20V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
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