IRF7425 Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF7425
12000
10000
8000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
6000
4000
2000
C_oss
C_rss
0
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
8 _{ID = -15A}
6
V_DS =-16V
V_DS =-10V
4
2
0
0
40
80
120
160
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150° C
1
T_J = 25° C
0.1
0.2
V_GS = 0 V
0.4
0.6
0.8
1.0
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
100us
1ms
10
T_A = 25 °C
T_J = 150°C
Single Pulse
1
0.1
1
10ms
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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