IRF7425 Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
V_DSS
20V
PD- 94022A
IRF7425
HEXFET^® Power MOSFET
R_DS(on) max (mΩ)
8.2@V_GS = -4.5V
13@V_GS = -2.5V
I_D
-15A
-13A
Description
S
1
A
8
D
These P-Channel HEXFET^® Power MOSFETs from
International Rectifier utilize advanced processing
S
2
7
D
techniques to achieve the extremely low on-resistance _S ³
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery ^{G 4}
6
D
5
D
and load management applications..
The SO-8 has been modified through a customized
Top View
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-15
-12
-60
2.5
1.6
20
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
1
11/20/01