IRF7425 Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF7425
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
-20 ––– –––
––– 0.010 –––
––– ––– 8.2
––– ––– 13
-0.45 ––– -1.2
44 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
––– 87 130
––– 18 27
––– 21 32
––– 13 –––
––– 20 –––
––– 230 –––
––– 160 –––
––– 7980 –––
––– 1480 –––
––– 980 –––
Units
V
V/°C
mΩ
V
S
µA
nA
nC
ns
pF
Conditions
V_GS = 0V, I_D = -250µA
Reference to 25°C, I_D = -1mA
V_GS = -4.5V, I_D = -15A
V_GS = -2.5V, I_D = -13A
V_DS = V_GS, I_D = -250µA
V_DS = -10V, I_D = -15A
V_DS = -16V, V_GS = 0V
V_DS = -16V, V_GS = 0V, T_J = 70°C
V_GS = -12V
V_GS = 12V
I_D = -15A
V_DS = -10V
V_GS = -4.5V
V_DD = -10V
I_D = -1.0A
R_G = 6.0Ω
V_GS = -4.5V
V_GS = 0V
V_DS = -15V
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– -2.5
showing the
A
integral reverse
G
––– ––– -60
p-n junction diode.
S
––– ––– -1.2 V T_J = 25°C, I_S = -2.5A, V_GS = 0V
––– 120 180 ns T_J = 25°C, I_F = -2.5A
––– 160 240 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board, t ≤ 10sec.
2
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