IRF7380PBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET®Power MOSFET

IRF7380PbF
100000
10000
1000
100
10
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID= 2.1A
10
8
VDS= 64V
VDS= 40V
VDS= 16V
6
4
2
0
0 2 4 6 8 10 12 14 16
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J= 150 ° C
1
T_J= 25 ^° C
0.1
0.0
V _GS = 0 V
0.5
1.0
1.5
2.0
V_SD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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