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IRF7380PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET®Power MOSFET | |||
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IRF7380PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
80 âââ âââ V VGS = 0V, ID = 250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ 0.09 âââ V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance âââ 61
f 73 m⦠VGS = 10V, ID = 2.2A
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 80V, VGS = 0V
âââ âââ 250
VDS = 64V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
4.3 âââ âââ
âââ 15 23
âââ 2.9 âââ
âââ 4.5 âââ
âââ 9.0 âââ
âââ 10 âââ
âââ 41 âââ
âââ 17 âââ
âââ 660 âââ
âââ 110 âââ
âââ 15 âââ
âââ 710 âââ
âââ 72 âââ
âââ 140 âââ
S VDS = 25V, ID = 2.2A
ID = 2.2A
nC VDS = 40V
f VGS = 10V
VDD = 40V
ID = 2.2A
ns RG = 24â¦
f VGS = 10V
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 64V, Æ = 1.0MHz
g VGS = 0V, VDS = 0V to 64V
Avalanche Characteristics
EAS
IAR
dh Parameter
Single Pulse Avalanche Energy
ÃÂ Avalanche Current
Typ.
âââ
âââ
Max.
75
2.2
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂh (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 3.6 A MOSFET symbol
D
showing the
âââ âââ 29 A integral reverse
G
âââ âââ 1.3
âââ 50 âââ
âââ 110 âââ
p-n junction diode.
S
f V TJ = 25°C, IS = 2.2A, VGS = 0V
f ns TJ = 25°C, IF = 2.2A, VDD = 40V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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