IRF7380PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET®Power MOSFET

Applications
l High frequency DC-DC converters
l Lead-Free
PD - 95723
IRF7380PbF
HEXFET^® Power MOSFET
V_DSS
R_DS(on) max
I_D
: 80V 73m @V_GS = 10V 3.6A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
S1
1
G1
2
8
D1
7
D1
l Fully Characterized Capacitance Including _S2 ³
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
G2
4
6
D2
5
D2
l Fully Characterized Avalanche Voltage
Top View
and Current
SO-8
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 100°C
I_DM
P_D @T_A = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
dv/dt
T_J
T_STG
Linear Derating Factor
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJL
Junction-to-Drain Lead
R_θJA
Junction-to-Ambient (PCB Mount) *
Max.
80
± 20
3.6h
2.9
29
2.0
0.02
2.3
-55 to + 150
Units
V
A
W
W/°C
V/ns
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes  through † are on page 8
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1
08/10/04