IRF7311 Datasheet, PDF (4/7 Pages) International Rectifier – HEXFET Power MOSFET

IRF7311
2.0 _{ID = 6.0A}
1.5
1.0
0.5
V_GS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 5. Normalized On-Resistance
Vs. Temperature
0.032
0.028
V _GS = 2.7V
0.024
0.020
0
V_{G S} = 4.5V
A
10
20
30
I_D , Drain C urrent (A)
Fig 6. Typical On-Resistance Vs. Drain
Current
0.05
0.04
0.03
I_D = 6.6A
0.02
0.01
0
A
2
4
6
8
V _{G S} , Gate-to-S ource V oltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
300
ID
TOP
1.8A
250
3.3A
BOTTOM 4.1A
200
150
100
50
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current