IRF7311 Datasheet, PDF (2/7 Pages) International Rectifier – HEXFET Power MOSFET

IRF7311
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
20 ––– ––– V V_GS = 0V, I_D = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.027 ––– V/°C Reference to 25°C, I_D = 1mA
R_DS(on)
Static Drain-to-Source On-Resistance
––– 0.023 0.029
––– 0.030 0.046
Ω
V_GS = 4.5V, I_D = 6.0A „
V_GS = 2.7V, I_D = 5.2A „
V_GS(th)
Gate Threshold Voltage
0.7 ––– ––– V V_DS = V_GS, I_D = 250µA
g_fs
Forward Transconductance
––– 20 ––– S V_DS = 10V, I_D = 6.0A
I_DSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 5.0
µA
V_DS = 16V, V_GS = 0V
V_DS = 16V, V_GS = 0V, T_J = 55°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 _nA V_GS = 12V
––– ––– -100
V_GS = -12V
Q_g
Total Gate Charge
––– 18 27
I_D = 6.0A
Q_gs
Gate-to-Source Charge
––– 2.2 3.3 nC V_DS = 10V
Q_gd
Gate-to-Drain ("Miller") Charge
––– 6.2 9.3
V_GS = 4.5V, See Fig. 10 „
t_d(on)
Turn-On Delay Time
––– 8.1 12
V_DD = 10V
t_r
t_d(off)
t_f
Rise Time
Turn-Off Delay Time
Fall Time
––– 17 25
––– 38 57
––– 31 47
ns ^{ID = 1.0A}
R_G = 6.0Ω
R_D = 10Ω „
C_iss
Input Capacitance
––– 900 –––
V_GS = 0V
C_oss
Output Capacitance
––– 430 ––– pF V_DS = 15V
C_rss
Reverse Transfer Capacitance
––– 200 –––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
––– ––– 2.5
––– ––– 26
MOSFET symbol
showing the
A _{integral reverse}
p-n junction diode.
D
G
S
––– 0.72 1.0 V T_J = 25°C, I_S = 1.7A, V_GS = 0V ƒ
––– 52 77
––– 58 86
ns T_J = 25°C, I_F = 1.7A
nC di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 12mH
R_G = 25Ω, I_AS = 4.1A.
ƒ I_SD ≤ 4.1A, di/dt ≤ 92A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Surface mounted on 1 in square Cu board