IRF7311 Datasheet, PDF (3/7 Pages) International Rectifier – HEXFET Power MOSFET

100
VGS
TOP 7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
BOTTOM 1.50V
10
1.50V
20µs PULSE WIDTH
TJ = 25 ^°C
1
0.1
1
10
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
IRF7311
100
VGS
TOP
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
BOTTOM 1.50V
10
1.50V
20µs PULSE WIDTH
TJ = 150 ^°C
1
0.1
1
10
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
100
T_J = 25 ^°C
T_J = 150 ^° C
10
V _DS= 10V
20µs PULSE WIDTH
1
1.5
2.0
2.5
3.0
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
T_J = 150 ^° C
10
T_J = 25^° C
V_GS = 0 V
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD,Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage