IRF6665 Datasheet, PDF (4/8 Pages) International Rectifier – DIGITAL AUDIO MOSFET

IRF6665
100
10
TJ = -40°C
TJ = 25°C
TJ = 150°C
VGS = 0V
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
5
1000
100
Tc = 25°C
Tj = 150°C
Single Pulse
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µsec
1
1msec
DC
10msec
0.1
0.01
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5.5
4
3
2
1
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
5.0
4.5
4.0
3.5
ID = 250µA
ID = 1.0mA
3.0
ID = 1.0A
2.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
R_1R1
R_2R2
R_3R3
R_4R4
R_5R5
Ri (°C/W) τi (sec)
τ_{J τJ}
τ_{Cτ 1.6195 0.000126}
τ_{1 τ1}
τ_{2 τ2}
τ_{3 τ3}
τ_{4 τ4}
τ_{5 τ5}
2.1406 0.001354
Ci= τi/Ri
22.2887 0.375850
Ci= τi/Ri
20.0457 7.410000
11.9144 99
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient ƒ
4
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