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IRF6665 Datasheet, PDF (2/8 Pages) International Rectifier – DIGITAL AUDIO MOSFET | |||
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IRF6665
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
âV(BR)DSS/âTJ
Breakdown Voltage Temp. Coefficient
âââ
RDS(on)
Static Drain-to-Source On-Resistance
âââ
VGS(th)
Gate Threshold Voltage
3.0
IDSS
Drain-to-Source Leakage Current
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
RG(int)
Internal Gate Resistance
âââ
Typ.
âââ
0.12
53
âââ
âââ
âââ
âââ
âââ
1.9
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
gfs
Forward Transconductance
6.6
âââ
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ
8.7
âââ
2.1
âââ
0.58
âââ
2.8
âââ
3.2
âââ
3.38
âââ
7.4
âââ
2.8
âââ
14
âââ
4.3
âââ
530
âââ
110
âââ
29
âââ
510
âââ
67
âââ
130
Avalanche Characteristics
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
ÃÂ Avalanche Current
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
âââ
Typ.
âââ
âââ
âââ
âââ
âââ
âââ
31
âââ
37
Max.
âââ
âââ
62
5.0
20
250
100
-100
2.9
Units
V
V/°C
mâ¦
V
µA
nA
â¦
Conditions
VGS = 0V, ID = 250µA
f Reference to 25°C, ID = 1mA
VGS = 10V, ID = 5.0A
VDS = VGS, ID = 250µA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Max.
âââ
11.7
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Units
S
nC
Conditions
VDS = 10V, ID = 5.0A
VDS = 50V
VGS = 10V
ID = 5.0A
See Fig.6 and 16
VDD = 50V
ID = 5.0A
ns
f RG = 6.0â¦
VGS = 10V
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
g VGS = 0V, VDS = 80V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Typ.
âââ
âââ
Max.
11
5.0
Units
mJ
A
Max.
4.2
34
1.3
âââ
âââ
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
f TJ = 25°C, IS = 5.0A, VGS = 0V
f TJ = 25°C, IF = 5.0A, VDD = 25V
di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Starting TJ = 25°C, L = 0.89mH, RG = 25â¦, IAS = 5.0A.
 Surface mounted on 1 in. square Cu board.
 Pulse width ⤠400µs; duty cycle ⤠2%.
Â
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.
2
 Used double sided cooling , mounting pad.
 Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
 TC measured with thermal couple mounted to top
(Drain) of part.
 Rθ is measured at TJ of approximately 90°C.
 Based on testing done using a typical device & evaluation board
at Vbus=±45V, fSW=400KHz, and TA=25°C. The delta case
temperature âTC is 55°C.
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