IRF6665 Datasheet, PDF (1/8 Pages) International Rectifier – DIGITAL AUDIO MOSFET

DIGITAL AUDIO MOSFET
PD - 96900
IRF6665
Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier applications
• Low R_DS(on) for improved efficiency
• Low Q_g for better THD and improved efficiency
• Low Q_rr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower EMI
• Can deliver up to 100W per channel into 8Ω with no heatsink Š
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· Lead and Bromide Free
Key Parameters
V_DS
100
V
R_DS(on) typ. @ V_GS = 10V 53
m:
Q_g typ.
8.7 nC
R_G(int) typ.
1.9
SH
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ
SX
ST
SH
MQ
MX
MT
MN
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing
techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate
resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6665 device utilizes DirectFET TM packaging technology. DirectFET TM packaging technology offers lower parasitic inductance and
resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage
ringing that accompanies fast current transients. The DirectFET TM package is compatible with existing layout geometries used in power
applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is
followed regarding the manufacturing method and processes. The DirectFET TM package also allows dual sided cooling to maximize thermal
transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient,
robust and reliable device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
Gate-to-Source Voltage
Max.
100
± 20
Units
V
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
19
4.2
A
3.4
34
P_D @T_C = 25°C
P_D @T_A = 25°C
P_D @T_A = 70°C
T_J
T_STG
Maximum Power Dissipation
e Power Dissipation
e Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
42
2.2
1.4
0.017
-40 to + 150
W
W/°C
°C
Thermal Resistance
Parameter
R_θJA
ek Junction-to-Ambient
R_θJA
hk Junction-to-Ambient
R_θJA
ik Junction-to-Ambient
R_θJC
jk Junction-to-Case
R_θJ-PCB
Junction-to-PCB Mounted
Notes  through Š are on page 2
www.irf.com
Typ.
–––
12.5
20
–––
1.4
Max.
58
–––
–––
3.0
–––
Units
°C/W
1
10/11/04