IRF5NJZ34 Datasheet, PDF (4/7 Pages) International Rectifier – HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)

IRF5NJZ34
1200
1000
800
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
600
Coss
400
200
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID= 22A
8
VDS= 44V
VDS= 27V
VDS= 11V
4
0
0
4
8
12 16 20 24
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150°C
10
TJ = 25°C
1.0
0.4
VGS = 0V
0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
100µs
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
1ms
1_0ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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