English
Language : 

IRF5NJZ34 Datasheet, PDF (2/7 Pages) International Rectifier – HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRF5NJZ34
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
55 — —
∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.054 —
Voltage
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 250µA
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.04 Ω
VGS = 10V, ID = 16A ➃
VGS(th)
gfs
IDSS
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
2.0 — 4.0 V
8.0 — — S ( )
—
— 25 µA
— — 250
— — 100
—
— -100 nA
— — 34
— — 7.0 nC
— — 14
VDS = VGS, ID = 250µA
VDS = 10V, IDS = 16A ➃
VDS = 55V ,VGS=0V
VDS = 44V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 22A
VDS = 44V
— — 12
— — 28
—
— 30
ns
VDD = 28V, ID = 22A,
VGS =10V, RG = 13Ω
— — 30
— 4.0 — nH
Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 695 —
— 252 — pF
— 100 —
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
Continuous Source Current (Body Diode) — — 22* A
ISM Pulse Source Current (Body Diode) ➀
— — 88
Test Conditions
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
— — 1.6 V
— — 86 nS
— — 200 nC
Tj = 25°C, IS = 22A, VGS = 0V ➃
Tj = 25°C, IF = 22A, di/dt ≤ 100A/µs
VDD ≤ 25V ➃
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 3.13 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com