IRF5NJZ34 Datasheet, PDF (3/7 Pages) International Rectifier – HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)

IRF5NJZ34
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1
0.1
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
4.5V
1
0.1
20µs PULSE WIDTH
Tj = 150°C
1
10
100.0
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
2.0 _{ ID = 22A}
1.5
1.0
1.0
4
VDS = 25V
20µs P¹U⁵ LSE WIDTH
5 6 7 8 9 10 11 12
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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0.5
 VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3