EMP25P12B Datasheet, PDF (4/15 Pages) International Rectifier – NPT IGBTs 25A, 1200V

EMP25P12B I27149 08/07
Switching Characteristics:
For proper operation the device should be used within the recommended conditions.
T_J = 25°C (unless otherwise specified)
Symbol
Qg
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
td (on)
Tr
td (off)
Tf
Cies
Coes
Cres
RBSOA
Parameter Definition
Total Gate Charge (turn on)
Gate – Emitter Charge (turn on)
Gate – Collector Charge (turn on)
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Turn on delay time
Rise time
Turn off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
SCSOA
EREC
Trr
Irr
RthJC_T
RthJC_D
RthC-H
Short Circuit Safe Operating Area
Diode reverse recovery energy
Diode reverse recovery time
Peak reverse recovery current
Each IGBT to copper plate thermal resistance
Each Diode to copper plate thermal resistance
Module copper plate to heat sink thermal
resistance. Silicon grease applied = 0.1mm
Min
Typ
Max Units
Test Conditions
169
254
IC = 25A
19
29
nC VCC = 600V
82
123
VGE = 15V
1.9
3.6
IC = 25A, VCC = 600V, TJ = 25 ºC
1.3
2.0
mJ V_GE = 15V, R_G =20Ω, L = 200µH
3.2
5.6
Tail and Diode Rev. Recovery included
2.7
4.6
IC = 25A, VCC = 600V, TJ = 125 ºC
2.0
2.3
mJ V_GE = 15V, R_G =20Ω, L = 200µH
4.7
6.9
Tail and Diode Rev. Recovery included
192
210
33
49
IC = 25A, VCC = 600V, TJ = 125 ºC
213
227
ns
210
379
VGE = 15V, RG =20Ω, L = 200µH
2200
210
85
FULL SQUARE
10
1820
2400
300
25
32
0.65
0.95
0.03
VCC = 30V
PF VGE = 0V
f = 1MHz
TJ = 150 ºC, I C =100A, VGE = 15V to 0V
VCC = 1000V, Vp = 1200V, RG = 5Ω
TJ = 150 ºC, VGE = 15V to 0V
µs
VCC = 1000V, Vp= 1200V, RG = 5Ω
µJ TJ = 125 ºC
ns IF= 25A, VCC = 600V,
A VGE = 15V, RG =20Ω, L = 200µH
ºC/W
ºC/W _{See also fig.24 and 25}
ºC/W
Fig.
23
CT1
CT4
WF1
WF2
13,
15
CT4
WF1
WF2
14,16
CT4
WF1
WF2
22
4
CT2
CT3
WF4
17,18
19,20
21
CT4
WF3
24,25
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