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| EMP25P12B Datasheet, PDF (10/15 Pages) International Rectifier – NPT IGBTs 25A, 1200V | |||
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EMP25P12B I27149 08/07
Fig. 21 â Typical Diode EREC vs. IF
Tj = 125ºC
Fig. 22 â Typical Capacitance vs. VCE
VGE = 0V; f = 1MHz
IF = (A)
Fig. 23 â Typical Gate Charge vs. VGE
IC = 25A; L = 600µH; VCC = 600V
VCE = (V)
Fig. TF1 â Thermal Sensor Resistance
vs. Base-Plate Temperature
www.irf.com
QG = (nC)
TC (ºC)
10
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