EMP25P12B Datasheet, PDF (3/15 Pages) International Rectifier – NPT IGBTs 25A, 1200V

EMP25P12B I27149 08/07
Electrical Characteristics:
For proper operation the device should be used within the recommended conditions.
T_J = 25°C (unless otherwise specified)
Symbol
Parameter Definition
Min. Typ. Max. Units
Test Conditions
V(BR)CES
∆V(BR)CES / _∆T
Collector To Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector To Emitter Saturation Voltage
VGE(th)
∆VGE(th) / _∆Tj
gfe
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Trasconductance
ICES
Zero Gate Voltage Collector Current
VFM
IRM
IGES
R1/2/3
Rsh
Diode Forward Voltage Drop
Diode Reverse Leakage Current
Gate To Emitter Leakage Current
Sensing Resistors
DC bus minus series shunt resistor
1200
V
VGE = 0V, IC = 250µA
+1.2
V/ºC VGE = 0V, IC = 1mA (25 - 125 ºC)
2.28
2.56
IC = 25A, VGE = 15V
3.2
3.65
V
IC = 50A, VGE = 15V
2.74
3.10
IC = 25A, VGE = 15V, TJ = 125 ºC
4.0
5.0
6.0
V
VCE = VGE, IC = 250µA
-1.2
mV/ºC VCE = VGE, IC = 1mA (25 - 125 ºC)
14.8
16.9
19.0
S
VCE = 50V, IC = 25A, PW = 80µs
250
VGE = 0V, VCE = 1200V
325
675
µA
VGE = 0V, VCE = 1200V, TJ = 125 ºC
2000
VGE = 0V, VCE = 1200V, TJ = 150 ºC
1.76
2.06
1.87
2.18
V
IC = 25A
IC = 25A, TJ = 125 ºC
20
µA
VR = 1200V, TJ = 25 ºC
±100
nA
VGE =± 20V
3.96
4
4.04
mΩ
3.96
4
4.04
Fig.
5, 6
7, 9
10, 11
12
8
8
General Description
The EMP module contains six IGBTs and HexFreds
Diodes in a standard inverter configuration. IGBTs used
are the new NPT 1200V-25A (current rating measured at
100C°), generation V from International Rectifier; the
HexFred diodes have been designed specifically as pair
elements for these power transistors. Thanks to the new
design and technological realization, these devices do not
need any negative gate voltage for their complete turn off;
moreover the tail effect is also substantially reduced
compared to competitive devices of the same family. This
feature tremendously simplifies the gate driving stage.
Another innovative feature in this type of power modules is
the presence of sensing resistors in the three output
phases, for precise motor current sensing and short circuit
protections, as well as another resistor of the same value
in the DC bus minus line, needed only for device
protections purposes. A complete schematic of the EMP
module is shown on page 1 where all sensing resistors
have been clearly evidenced, a thermal sensor with
negative temperature coefficient is also embedded in the
device structure.
The package chosen is mechanically compatible with the
well known EconoPack outline, Also the height of the
plastic cylindrical nuts for the external PCB positioned on
www.irf.com
its top is the same as the EconoPack II, so that, with the
only re-layout of the main motherboard, this module can fit
into the same mechanical fixings of the standard
EconoPack II package thus speeding up the device
evaluation in an already existing driver. An important
feature of this new device is the presence of Kelvin
connections for all feedback and command signals
between the board and the module with the advantage of
having all emitter and resistor sensing independent from
the main power path. The final benefit is that all low power
signal from/to the controlling board are unaffected by
parasitic inductances or resistances inevitably present in
the module power layout. The new package outline is
shown on bottom of page 1. Notice that because of high
current spikes on those inputs the DC bus power pins are
doubled in size compared to the other power pins. Module
technology uses the standard and well know DBC (Direct
Bondable Copper): over a thick Copper base an allumina
(Al2O3) substrate with a 300µm copper foil on both side is
placed and IGBTs and Diodes dies are directly soldered,
through screen printing process. These dies are then
bonded with a 15 mils aluminum wire for power and signal
connections. All components are then completely covered
by a silicone gel for mechanical protection and electrical
isolation purposes.
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