IRFR3418 Datasheet, PDF (3/10 Pages) International Rectifier – HEXFET Power MOSFET

IRFR/U3418
1000
100
10
1
TOP
BOTTOM
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
0.1
0.01
0.001
0.1
6.0V
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100
10
6.0V
TOP
BOTTOM
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 175°C
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000.00
100.00
TJ = 175°C
10.00
1.00
0.10
0.01
5
TJ = 25°C
VDS = 25V
20µs PULSE WIDTH
6 7 8 9 10 11 12 13 14 15
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.5 _{ID = 70A}
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature (°C^° )
Fig 4. Normalized On-Resistance
Vs. Temperature
3