|
IRFR3418 Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET | |||
|
◁ |
IRFR/U3418
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
80 âââ âââ V VGS = 0V, ID = 250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ 0.08 âââ V/°C Reference to 25°C, ID = 1mA
RDS(on)
f Static Drain-to-Source On-Resistance âââ 11.5 14 m⦠VGS = 10V, ID = 18A
VGS(th)
Gate Threshold Voltage
3.5 âââ 5.5 V VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 80V, VGS = 0V
âââ âââ 250
VDS = 64V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
66 âââ âââ
âââ 63 94
âââ 23 âââ
âââ 23 âââ
âââ 24 âââ
âââ 72 âââ
âââ 41 âââ
âââ 27 âââ
âââ 3510 âââ
âââ 330 âââ
âââ 190 âââ
âââ 1220 âââ
âââ 240 âââ
âââ 360 âââ
S VDS = 25V, ID = 18A
ID = 18A
nC VDS = 40V
f VGS = 10V
VDD = 40V
ID = 18A
ns RG = 6.8â¦
f VGS = 10V
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 64V, Æ = 1.0MHz
e VGS = 0V, VDS = 0V to 64V
Avalanche Characteristics
Parameter
EAS
IAR
dh Single Pulse Avalanche Energy
ÃÂ Avalanche Current
Typ.
âââ
âââ
Max.
260
18
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂh (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 70 A MOSFET symbol
D
âââ âââ 280
showing the
integral reverse
G
âââ âââ 1.3
âââ 57 âââ
âââ 130 âââ
p-n junction diode.
S
f V TJ = 25°C, IS = 18A, VGS = 0V
f ns TJ = 150°C, IF = 18A, VDD = 25V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
|
▷ |