IRFR3418 Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

Applications
l High frequency DC-DC converters
V_DSS
80V
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
PD - 94452
IRFR3418
IRFU3418
HEXFET^® Power MOSFET
R_DS(on) Max
I_D
14m:
30A
D-Pak
IRFR3418
I-Pak
IRFU3418
Absolute Maximum Ratings
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_A = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
dv/dt
T_J
T_STG
Linear Derating Factor
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJC
Junction-to-Case
R_θJA
Junction-to-Ambient (PCB Mount) *
R_θJA
Junction-to-Ambient
Max.
80
± 20
70h
50
280
140
3.8
0.95
5.2
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
1.05
40
110
Units
V
A
W
W/°C
V/ns
°C
Units
°C/W
Notes  through † are on page 10
www.irf.com
1
09/12/02