IRFPS40N50L Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.087ohm, Id=46A)

IRFPS40N50L
1000
^TOP
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
4.5V
0.1
0.01
0.1
 ^{20µs PULSE WIDTH}
TJ = 25 ^°C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
 1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
100
5.0V
BOTTOM4.5V
10
4.5V
1
0.1
0.1
 ^{20µs PULSE WIDTH}
T_J = 150 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100 _{ TJ = 150° C}
10
 T_J = 25^°C
1
0.1
4
 V DS= 50V
20µs PULSE WIDTH
5
6
7
8
9 10 11
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.0 _{ ID = 47A}
2.5
2.0
1.5
1.0
0.5
 ^VGS ^{= 10V}
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (^° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3