 English |
|
|
|
|
|
|
|
| IRFPS40N50L Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.087ohm, Id=46A) | |||
| |||
|
PD- 93923B
SMPS MOSFET IRFPS40N50L
Applications
HEXFET® Power MOSFET
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply
l High Speed Power Switching
l ZVS and High Frequency Circuit
VDSS RDS(on) typ.
ID
500V
0.087â¦
46A
l PWM Inverters
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low Trr and Soft Diode Recovery
l High Performance Optimised Anti-parallel Diode
SUPER TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Â
Power Dissipation
Linear Derating Factor
46
29
A
180
540
W
4.3
W/°C
VGS
Gate-to-Source Voltage
dv/dtPeak Diode Recovery dv/dt Â
± 30
V
25
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300
°C
(1.6mm from case )
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
âââ âââ 46
MOSFET symbol
D
A showing the
âââ âââ 180
integral reverse
G
p-n junction diode.
S
VSD
trr
Qrr
IRRM
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
âââ âââ 1.5 V TJ = 25°C, IS = 46A, VGS = 0V Â
âââ 170 250 ns TJ = 25°C
âââ 220 330
TJ = 125°C
IF = 46A
di/dt = 100A/µs Â
âââ 705 1060 nC TJ = 25°C
âââ 1.3 2.0 µC TJ = 125°C
âââ 9.0 âââ A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typical SMPS Topologies
l Bridge Converters
l All Zero Voltage Switching
www.irf.com
1
05/09/01
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese