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IRFPS40N50L Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.087ohm, Id=46A) | |||
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IRFPS40N50L
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
500 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.60 âââ V/°C Reference to 25°C, ID = 1mAÂ
âââ 0.087 0.100 ⦠VGS = 10V, ID = 28A Â
3.0 âââ 5.0 V VDS = VGS, ID = 250µA
âââ âââ 50 µA VDS = 500V, VGS = 0V
âââ âââ 2.0 mA VDS = 400V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
21 âââ âââ S VDS = 50V, ID = 46A
âââ âââ 380
ID = 46A
âââ âââ 80 nC VDS = 400V
âââ âââ 190
VGS = 10V, See Fig. 6 and 13 Â
âââ 27 âââ
VDD = 250V
âââ 170 âââ ns ID = 46A
âââ 50 âââ
RG = 0.85â¦
âââ 69 âââ
VGS = 10V,See Fig. 10 Â
âââ 8110 âââ
VGS = 0V
âââ 960 âââ
VDS = 25V
âââ 130 âââ pF Æ = 1.0MHz, See Fig. 5
âââ 11200 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
âââ 240 âââ
âââ 420 âââ
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
920
46
54
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
âââ
0.24
âââ
Max.
0.23
âââ
40
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
 Starting TJ = 25°C, L = 0.86mH, RG = 25â¦,
IAS = 46A (See Figure 12a)
 ISD ⤠46A, di/dt ⤠367A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C.
2
 Pulse width ⤠400µs; duty cycle ⤠2%.
Â
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
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