IRFB4710PBF Datasheet, PDF (3/12 Pages) International Rectifier – HEXFET® Power MOSFET

IRFB/IRFS/IRFL4710PbF
 1000
TOP
100
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
10
1
0.1
0.01
0.1
6.0V
 20µs PULSE WIDTH
TJ = 25 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
^TOP
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
100
6.0V
10
 20µs PULSE WIDTH
TJ = 175 °C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
 T_J = 175^° C
100
10
 T_J = 25^°C
1
0.1
6.0
 V DS= 50V
20µs PULSE WIDTH
7.0
8.0
9.0
10.0
V_GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.0 _{ ID = 75A}
2.5
2.0
1.5
1.0
0.5
 ^VGS ^{= 10V}
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3