IRFB4710PBF Datasheet, PDF (11/12 Pages) International Rectifier – HEXFET® Power MOSFET

IRFB/IRFS/IRFL4710PbF
D²Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR R
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
F E E D D IRE C TIO N 1.85 (.073)
1.65 (.065)
TR L
10 .90 (.42 9)
10 .70 (.42 1)
1.60 (.063)
1.50 (.059)
11.60 (.457 )
11.40 (.449 )
15.4 2 (.609 )
15.2 2 (.601 )
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145 )
0.342 (.0135 )
24.30 (.9 57)
23.90 (.9 41)
4.7 2 (.136)
4.5 2 (.178)
FE E D D IRE CTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
6 0 .0 0 (2 .3 6 2)
M IN .
Notes:
NOTES :
1. CO M FO RM S TO EIA-418.
2 . C O N T R O L L IN G D IM E N S IO N : M ILL IM E T E R .
3 . D IM E N S IO N M E A S U R E D @ H U B .
4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
 Repetitive rating; pulse width limited by
max. junction temperature.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
‚ Starting T_J = 25°C, L = 190µH
… C_oss eff. is a fixed capacitance that gives the same charging time
R_G = 25Ω, I_AS = 45A, V_GS = 10V
as C_oss while V_DS is rising from 0 to 80% V_DSS
ƒ I_SD ≤ 45A, di/dt ≤ 420A/µs, V_DD ≤ V_(BR)DSS,
† This is only applied to TO-220AB package
T_J ≤ 175°C
‡ This is applied to D²Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
TAC Fax: [phone]
Visit us at www.irf.com for sales contact information.04/04
www.irf.com
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