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IRFB4710PBF Datasheet, PDF (2/12 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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IRFB/IRFS/IRFL4710PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
100
âââ
âââ
3.5
âââ
âââ
âââ
âââ
âââ âââ V
0.11 âââ V/°C
0.011 0.014 â¦
âââ 5.5 V
âââ 1.0 µA
âââ 250
âââ 100
nA
âââ -100
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 45A Â
VDS = VGS, ID = 250µA
VDS = 95V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
35 âââ âââ
Qg
Total Gate Charge
âââ 110 170
Qgs
Gate-to-Source Charge
âââ 43 âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ 40 âââ
td(on)
Turn-On Delay Time
âââ 35 âââ
tr
Rise Time
âââ 130 âââ
td(off)
Turn-Off Delay Time
âââ 41 âââ
tf
Fall Time
âââ 38 âââ
Ciss
Input Capacitance
âââ 6160 âââ
Coss
Output Capacitance
âââ 440 âââ
Crss
Reverse Transfer Capacitance
âââ 250 âââ
Coss
Output Capacitance
âââ 1580 âââ
Coss
Output Capacitance
âââ 280 âââ
Coss eff. Effective Output Capacitance
âââ 430 âââ
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 45A
ID = 45A
VDS = 50V
VGS = 10V,
VDD = 50V
ID = 45A
RG = 4.5â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 80V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 80V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
190
45
20
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ÂÂ
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 75
A showing the
âââ âââ 300
integral reverse
G
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 45A, VGS = 0V Â
âââ 74 110 ns TJ = 25°C, IF = 45A
âââ 180 260 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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