IRFB17N20DPBF Datasheet, PDF (3/12 Pages) International Rectifier – HEXFET Power MOSFET

IRFB/IRFS/IRFSL17N20DPbF
100
10
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
5.0V
0.01
0.1
20µs PULSE WIDTH
TJ = 25 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
10
5.0V
20µs PULSE WIDTH
TJ= 175 °C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 175° C
10
T_J = 25°C
1
0.1
5.0
V DS = 50V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
10.0
V_GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.5 _{ID = 16A}
3.0
2.5
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3