IRFB17N20DPBF Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET Power MOSFET

SMPS MOSFET
PD- 95325
IRFB17N20DPbF
IRFS17N20DPbF
IRFSL17N20DPbF
HEXFET^® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
V_DSS
200V
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB17N20D
R_DS(on) max
I_D
0.17Ω
16A
D²Pak
TO-262
IRFS17N20D IRFSL17N20D
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
16
12
64
3.8
140
0.90
± 30
2.7
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Telecom 48V input Forward Converter
Notes  through … are on page 11
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1
6/1/04