IRF7413PBF Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET Power MOSFET

100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
20µs PULSE WIDTH
1
T_J = 25°C
A
0.1
1
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
TJ = 150°C
TJ = 25°C
10
V_DS = 10V
20µs PULSE WIDTH
1
A
3.0
3.5
4.0
4.5
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
IRF7413PbF
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
20µs PULSE WIDTH
1
T_J = 150°C
A
0.1
1
10
V _DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I_D = 7.3A
1.5
1.0
0.5
0.0
-60
V_GS = 10V
A
-40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature