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IRF7413PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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PD - 95017A
IRF7413PbF
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l 100% RG Tested
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
HEXFET® Power MOSFET
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
VDSS = 30V
RDS(on) = 0.011â¦
SO-8
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
c Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
EAS
dv/dt
d Linear Derating Factor
Single Pulse Avalanche Energency
e Peak Diode Recovery dv/dt
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance Ratings
RθJL
RθJA
Symbol
h Parameter
Junction-to-Drain Lead
gh Junction-to-Ambient
Max
30
± 20
13
9.2
58
2.5
0.02
260
5.0
-55 to +150
Typ
Max
âââ
20
âââ
50
Units
V
A
W
mW/°C
mJ
V/ns
°C
Units
°C/W
06/29/06
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