IRF7413PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF7413PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min Typ Max Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_{J Breakdown Voltage Temp. Coefficient}
R_DS(on)
V_GS(th)
g_fs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
30 ––– ––– V V_GS = 0V, I_D = 250µA
–––
–––
–––
0.034 –––
––– 0.011
––– 0.018
V/°C Reference to 25°C, I_D = 1mA
f _Ω V_GS = 10V, I_D = 7.3A
f V_GS = 4.5V, I_D = 3.7A
1.0 ––– 3.0 V V_DS = V_GS, I_D = 250µA
10 ––– ––– S V_DS = 10V, I_D = 3.7A
I_DSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25
µA ^{VDS = 30V, VGS = 0V}
V_DS = 24V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 _nA V_GS = -20V
––– ––– 100
V_GS = 20V
Q_g
Total Gate Charge
––– 52 79
I_D = 7.3A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– 6.1
––– 16
9.2
23
f nC VDS = 24V
V_GS = 10V, See Fig. 6 and 9
R_G
Gate Resistance
1.2 ––– 3.7
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
––– 8.6 –––
––– 50 –––
––– 52 –––
––– 46 –––
––– 1800 –––
––– 680 –––
––– 240 –––
V_DD = 15V
I_D = 7.3A
f ns RG = 6.2 Ω
R_G = 2.0Ω, See Fig. 10
V_GS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– 3.1
MOSFET symbol
A showing the
––– ––– 58
––– ––– 1.0
––– 74 110
––– 200 300
integral reverse
e ^{p-n junction diode.}
V T_J = 25°C, I_S = 7.3A, V_GS = 0V
e ^{ns TJ = 25°C, IF = 7.3A}
nC di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L =9.8mH
R_G = 25Ω, I_AS =7.3A. (See Figure 12)
ƒ I_SD ≤ 7.3A, di/dt ≤ 100A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Surface mounted on FR-4 board
† R_θ is measured at T_J approximately 90°C