AUIRFN7110 Datasheet, PDF (3/11 Pages) International Rectifier – Advanced Process Technology

1000
100
TOP
BOTTOM
VGS
10V
6.0V
5.5V
5.0V
4.75V
4.5V
4.25V
4.0V
10
1
0.1
0.1
4.0V
60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
VDS = 50V
60µs PULSE WIDTH
1
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
10
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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1000
100
TOP
BOTTOM
VGS
10V
6.0V
5.5V
5.0V
4.75V
4.5V
4.25V
4.0V
AUIRFN7110
10
4.0V
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
2.7
ID = 35A
2.3 ^{VGS = 10V}
1.9
1.5
1.1
0.7
0.3
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance vs. Temperature
14
ID= 35A
12
VDS= 80V
10
VDS= 50V
VDS= 20V
8
6
4
2
0
0 10 20 30 40 50 60 70
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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July 23, 2015