AUIRFN7110 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

AUTOMOTIVE GRADE
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of
other applications.
Applications
 Injection
 DC-DC Converter
 Automotive Lighting
 E-Horn
 48V Automotive Systems
V_DSS
R_DS(on) typ.
max
I_{D (Silicon Limited)}
G
Gate
AUIRFN7110
HEXFET^® POWER MOSFET
100V
11.5m
14.5m
58A
PQFN 5X6 mm
D
Drain
S
Source
Base Part Number
AUIRFN7110
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRFN7110TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
V_GS
E_AS
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Pulsed Drain Current 
Power Dissipation 
Power Dissipation
Linear Derating Factor 
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
Max.
58
41
232
4.3
125
0.029
± 20
133
Units
A
W
W/°C
V
mJ
See Fig. 13, 14, 17a, 17b A
-55 to + 175
°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2015 International Rectifier
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July 23, 2015